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| ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 package Features Two Channel Coupler SOIC-8A Surface Mountable Package Standard Lead Spacing of .05 " Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) * Isolation Test Voltage, 3000 VRMS * Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering * Lead-free component * * * * A1 C2 A3 C4 8C 7E 6C 5E e3 i179018 Pb Pb-free * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals * UL1577, File No. E52744 System Code Y A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adjacent circuits. The high BVCEO of 70 V gives a higher safety margin compared to the industry standard of 30 V. Description The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T are optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T come in a standard SOIC-8A small outline package for surface mounting which makes it ideally suited for high density applications with limited space. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. Order Information Part ILD205T ILD206T ILD207T ILD211T ILD213T ILD217T Remarks CTR 40 - 80 %, SOIC-8 CTR 63 - 125 %, SOIC-8 CTR 100 - 200 %, SOIC-8 CTR > 20 %, SOIC-8 CTR > 100 %, SOIC-8 CTR > 100 %, SOIC-8 For additional information on the available options refer to Option Information. Document Number 83647 Rev. 1.4, 26-Oct-04 www.vishay.com 1 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Peak reverse voltage Peak pulsed current Continuous forward current per channel Power dissipation Derate linearly from 25 C Pdiss 1.0 s, 300 pps Test condition Symbol VR Value 6.0 1.0 30 50 0.66 Unit V A mA mW mW/C Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Power dissipation per channel Derate linearly from 25 C Test condition Symbol BVCEO BVECO Pdiss Value 70 7.0 125 1.67 Unit V V mW mW/C Coupler Parameter Total package dissipation ambient (2 LEDs + 2 detectors, 2 channels) Derate linearly from 25 C Storage temperature Operating temperature Soldering time from 260 C Tstg Tamb Tsld Test condition Symbol Ptot Value 300 Unit mW 4.0 - 55 to + 150 - 55 to + 100 10 mW/C C C sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Reverse current Capacitance Test condition IF = 10 mA VR = 6.0 V VR = 0 Symbol VF IR CO Min Typ. 1.2 0.1 25 Max 1.55 100 Unit V A pF www.vishay.com 2 Document Number 83647 Rev. 1.4, 26-Oct-04 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Output Parameter Collector-emitter breakdown voltage Emitter-collector breakdown voltage Collector-emitter leakage current Collector-emitter capacitance Test condition IC = 10 A IE = 10 A VCE = 10 V, IF = 0 VCE = 0 Symbol BVCEO BVECO ICEO CCE Min 70 7.0 5.0 10 50 Typ. Max Unit V V nA pF Coupler Parameter Collector-emitter saturation voltage Capacitance (input-output) Isolation test voltage Resistance, input to output t = 1.0 sec. Test condition IF = 10 mA, IC = 2.5 mA Symbol VCE(sat) CIO VISO RIO 3000 100 0.5 Min Typ. Max 0.4 Unit V pF VRMS G Current Transfer Ratio Parameter DC Current Transfer Ratio Test condition VCE = 5.0 V, IF = 10 mA Part ILD205T ILD206T ILD207T ILD211T ILD213T VCE = 5.0 V, IF = 1.0 mA ILD205T ILD206T ILD207T ILD217T Symbol CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC CTRDC Min 40 63 100 20 100 13 22 34 100 30 45 70 120 Typ. Max 80 125 200 Unit % % % % % % % % % Document Number 83647 Rev. 1.4, 26-Oct-04 www.vishay.com 3 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Switching Characteristics Parameter Turn-on time Turn-off time Test condition IC = 2.0 mA, RL = 100 , VCC = 5.0 V IC = 2.0 mA, RL = 100 , VCC = 5.0 V Symbol ton toff Min 5.0 4.0 Typ. Max Unit s s Typical Characteristics (Tamb = 25 C unless otherwise specified) 1.2 NCTRce - Normalized CTRce 1.0 0.8 0.6 0.4 0.2 0.0 .01 CTR normalized @ IF = 10 mA V CE=5 V If - LED Current (ma) V CE=0.4 V .1 1 10 IF - LED Current - (mA) 100 iild205t_01 Vf - LED Forward Voltage (V) iild205t_03 Figure 1. Forward Current vs. Forward Voltage Figure 3. Normalized CTRce vs. Forward Current 1.2 NIc Normalized Collector Current 1.2 NCTRce - normalized CTRce 1.0 0.8 0.6 Coll current normalized @ IF=10 mA VCE=10 V IF=10 mA 1.0 0.8 0.6 0.4 0.2 IF=1 mA 0.0 20 40 IF=10 mA CTR nonsat normalized @ IF=10 mA VCE=10 V IF =5 mA 0.4 0.2 IF =1 mA 0.0 0 2 4 6 8 10 VCE-Collector to Emitter Voltage (V) 12 IF=5 mA 60 80 100 TA - Temperature (C) iild205t_04 iild205t_02 Figure 2. Collector-Emitter Current vs. Temperature Figure 4. Current Transfer Ratio (normalized) vs. Ambient Temperature www.vishay.com 4 Document Number 83647 Rev. 1.4, 26-Oct-04 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Switching speed (s) IF=10 mA Pulse width=100 ms Duty cycle=50% 10 2 Package Power Dissipation (mw) 10 3 Toff 200 Total pkg 150 100 To n 10 1 50 per channel 10 0 .1 1 10 100 Rl - Load Resistor (K) iild205t_01 0 25 50 75 100 125 TA - Ambient Temperature (C) iild205t_07 Figure 5. Switching Speed vs. Load Resistor Figure 7. Power Dissipation vs. Ambient Temperature Iceo-Leakage Current - (a) Vce=50 V Vce=50 V iild205t_06 Ta - Temperature (C) Figure 6. Collector Current vs. Ambient Temperature Input ton VCC=5 V Input RL VOUT Output 10% 50% 90% iild205t_08 toff tpdoff tr tr 10% 50% 90% tpdon td ts Figure 8. Switching Test Circuit Document Number 83647 Rev. 1.4, 26-Oct-04 www.vishay.com 5 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Package Dimensions in Inches (mm) .120.002 (3.05.05) R .010 (.13) .240 (6.10) C .154.002 L (3.91.05) .050 (1.27) .014 (.36) .036 (.91) .170 (4.32) .260 (6.6) Pin One I.D. .230.002 (5.84.05) ISO Method A .045 (1.14) 7 .016 (.41) .015.002 (.38.05) 40 .0585.002 (1.49.05) .004 (.10) .008 (.20) .008 (.20) 5 Max. R.010 (.25) Max. .125.002 (3.18.05) .050(1.27) Typ. .040 (1.02) i178020 .020.004 (.51.10) 2 Plcs. Lead coplanarity .001 Max. www.vishay.com 6 Document Number 83647 Rev. 1.4, 26-Oct-04 ILD205T/ 206T/ 207T/ 211T/ 213T/ 217T Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83647 Rev. 1.4, 26-Oct-04 www.vishay.com 7 |
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